The role of surface absorption coefficient in the thermal field of the laser–thin film interaction

In the present paper we developed a model of laser–thin film interaction, in order to find the thermal fields during laser irradiation. The approximation consists in the fact that k (the thermal conductivity) and γ (the thermal diffusivity) are of the same order of magnitude for the substrate and thin film. In consequence we can consider that we have one solid sample with k and γ of the Si substrate. On the other hand we cannot say the same thing about . One can easily see that, _SiCu,Al,Ag,_Au. In consequence we propose an absorption coefficient, as close as possible to reality. In the present paper, we then calculate the thermal fields produced by the surface absorption.