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| Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs | |
| 作者姓名： | 王勇刚 马骁宇 钟斌 王德松 张秋琳 冯宝华 |
| 作者单位： | Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，Institute of Physics，Chinese Academy of Sciences，Beijing 100080，Institute of Physics，Chinese Academy of Sciences，Beijing 100080 |
| 摘 要： | We reported a passive Q-switched diode laser pumped Yb: YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As+ in the concentration of 1016 ions/cm2. To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse. |
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