1. Department of Information and Communications, K-JIST, Kwangju, 500712 Rep. of Korea 2. OFS Laboratories, 700 Moutain Ave., Murray Hill, NJ 07974 USA 3. OFS Fitel, SPD, 19 Schoolhouse Road, Somerset, NJ 08873 USA
Abstract:
Sb-doped silica EDF showed an opposite temperature dependent gain profile compared to Al-doped silica EDF. Concatenation of those two EDFs showed a gain variation less than ± 0.4 dB over 40nm of C-band with the 15dB gain, in the temperature range of - 40 to + 80℃.