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InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency
Authors:Young Tae Byun  Hwa Sun Park  Sung Jin Kim  Deok Ha Woo  Jong Chang Yi  Yoshiaki Nakano
Institution:1. Photonics Research Center, Korea Institute of Science and Technology, Seoul, Korea
2. School of Electronics and Electrical Engineering, Hong Ik University, Seoul, Korea
3. Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan
Abstract:The P-p-n-N InGaAsP/InP ridge waveguide phase modulator has been fabricated and investigated at a wavelength of 1550nm. The phase modulation efficiency measured by the Fabry-Perot resonance method is as high as 34°/V.mm for TE mode. The QEO effect becomes dominant from -4V to -8V.
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