Mid-Infrared Lasers With Low Threshold and Photodetectors |
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| Authors: | A. Z. Li H. Li Y. G. Zhang X.Zhang Y. L. Zheng G. Y. Xu M. Qi C. Gmachl M. L. Peabody A. Y. Cho |
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| Affiliation: | 1. State Key Laboratory of Functional Materials foe Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,865 Changning Rd. Shanghai 200050, China
2. Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill,NJ 07974, USA |
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| Abstract: | We report the growth, fabrication, and operation of 2.0μm InGaAsSb/AlGaAsSb laser diodes and 8.5μm GaInAs/AlInAs quantum cascade lasers with low threshold current and the latest improvements in the performance of InGaAsSb photodetectors by passivation treatment. |
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