Quantum corrections to the conductance of n-GaAs films in a strong magnetic field |
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Authors: | S S Murzin |
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Institution: | (1) Institute of Solid-State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia |
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Abstract: | The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to
the quantum limit (ħωc = E
F). The Hall conductance G
xy is virtually independent of temperature T until the transverse conductance G
xx is quite large compared with e
2/h. In strong fields, when G
xx becomes comparable to e
2/h, G
xy starts to depend on T. The difference between the conductances G
xx at the two temperatures 4.2 and 0.35 K depends only weakly on the magnetic field H over a wide range of magnetic fields, while the conductances G
xx themselves vary strongly. The results can be explained by quantum corrections to the conductance as a result of the electron-electron
interaction in the diffusion channel. The possibility of quantization of the Hall conductance as a result of the electron-electron
interaction is discussed.
Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 201–206 (10 February 1998) |
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Keywords: | |
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