| 半导体量子线场效应管研究现状及趋势 |
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| 引用本文： | 闫发旺,张文俊,张荣桂.半导体量子线场效应管研究现状及趋势[J].微纳电子技术,2000(6). |
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| 作者姓名： | 闫发旺 张文俊 张荣桂 |
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| 作者单位： | 电子十三所!河北石家庄050051 |
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| 摘 要： | 综述了 - 族化合物半导体量子线场效应管的研究进展情况 ,阐述了量子线结构场效应管的制作工艺原理、制备方法、材料结构及器件的电学性能。指出了当前存在的工艺困难 ,并展望了进一步的发展趋势。
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| 关 键 词： | 量子线 量子线场效应管 平面栅场效应管 金属半导体场效应管 |
Status and development trend of semiconductor quantum-wires field-effective transistors |
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| YAN Fa-wang,ZHANG Wen-jun,ZHANG Rong-gui.Status and development trend of semiconductor quantum-wires field-effective transistors[J].Micronanoelectronic Technology,2000(6). |
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| Authors: | YAN Fa-wang ZHANG Wen-jun ZHANG Rong-gui |
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| Abstract: | The lately development of Ⅲ-Ⅴ compound semiconductor quantum-wires field-effective transistors(QWRs-FET)is presented in this paper.The technique principles,fabrication methods,material structure as well as the electronic characteristics of the device are described.The difficulties involving fabrication technique are discussed. |
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| Keywords: | quantum wires quantum-wires field-effective transistors in-plane gate FET MES |
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