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择优取向MgO缓冲层上制备的硅基Ba0.7Sr0.3TiO3薄膜的结构和性能研究
引用本文:尹伊,傅兴海,张磊,叶辉.择优取向MgO缓冲层上制备的硅基Ba0.7Sr0.3TiO3薄膜的结构和性能研究[J].物理学报,2009,58(7):5013-5021.
作者姓名:尹伊  傅兴海  张磊  叶辉
作者单位:浙江大学现代光学仪器国家重点实验室,杭州 300027
基金项目:国家自然科学基金(批准号:60578012)和浙江省自然科学基金(批准号:X405002)资助的课题.
摘    要:分别采用sol-gel法和磁控溅射法在Si(001)单晶衬底上制备出(111)和(001)取向的MgO缓冲层薄膜,随后在其上生长Ba0.7Sr0.3TiO3(BST30)铁电薄膜.通过X射线衍射,扫描电子显微镜,原子力显微镜等方法研究了薄膜的微结构.实验结果发现,在较厚的MgO(001)缓冲层上可长出(101)取向的BST30薄膜,而在较薄的MgO(111) 缓冲层上则表现出(101)和(111)取向相互竞争的现象,随着MgO(111)缓冲 关键词: 0.7Sr0.3TiO3')" href="#">Ba0.7Sr0.3TiO3 铁电薄膜 择优取向 sol-gel

关 键 词:Ba0.7Sr0.3TiO3  铁电薄膜  择优取向  sol-gel
收稿时间:2008-10-07

Study of structure and properties of Ba0.7Sr0.3TiO3 thin film with prefer-orientated MgO buffer layer on the silicon substrate
Yin Yi,Fu Xing-Hai,Zhang Lei and Ye Hui.Study of structure and properties of Ba0.7Sr0.3TiO3 thin film with prefer-orientated MgO buffer layer on the silicon substrate[J].Acta Physica Sinica,2009,58(7):5013-5021.
Authors:Yin Yi  Fu Xing-Hai  Zhang Lei and Ye Hui
Abstract:The (001) and (111)-oriented MgO buffer layers, on which ferroelectric Ba0.7Sr0.3TiO3(BST30) thin films were prepared subsequently, have been grown on Si (001) single-crystal substrates by sol-gel and magnetron sputtering methods. The microstructure of the thin films was investigated by XRD, AFM and SEM. The results showed that the (101)-prefer-oriented BST30 thin film was obtained on the thicker MgO(001) buffer layer, while only the competition between the (101) and (111) orientations of BST30 can be observed on the thinner MgO(111) buffer layer. With the increasing thickness of MgO(111) buffer layer, the BST30 thin film’s (101) orientation was restrained, whereas the (001) orientation was strengthened. The improved simplex method was utilized to obtain the optical constant (n) and thickness (d) of BST30 thin film and MgO buffer layer. It was also found that the MgO buffer layer can significantly decrease the leakage current and p-n junction effect of BST30 thin film.
Keywords:Ba0  7Sr0  3TiO3(BST30)  ferroelectric thin film  preferred orientation  sol-gel
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