The study of HgCdTe MBE-grown structure with ion milling |
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Authors: | MM Pociask |
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Institution: | (1) Department of Physics, Hull University, Hull, HU6 7RX, UK;(2) SELEX Sensors and Airborne Systems Infra-Red Limited, P.O. Box 217, Millbrook, Southampton, SO15 0EG, UK; |
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Abstract: | Of many techniques used to characterize quality of HgCdTe, ion milling is emerging as a unique means to reveal electrically
active and neutral defects and complexes. Ion milling is capable of strongly affecting electrical properties of HgCdTe, up
to conductivity type conversion in p-type material. It appears, that strongly non-equilibrium processes which take place under
ion milling, when material is oversaturated with mercury interstitial atoms generated near a surface, lead to formation of
specific defect complexes, which may not form under other type of treatment. By measuring parameters of a crystal before and
after milling, and following disintegration of defects with time after ion milling (’relaxation’), one can detect and identify
these defects. This method was applied to analyse different samples grown by molecular beam epitaxy. |
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