| 注氮剂量对SOI材料埋氧中电荷密度的影响 |
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| 引用本文： | 郑中山,刘忠立,李宁,李国花,张恩霞.注氮剂量对SOI材料埋氧中电荷密度的影响[J].半导体学报,2010,31(2):026001-4. |
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| 作者姓名： | 郑中山 刘忠立 李宁 李国花 张恩霞 |
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| 作者单位： | Department;Physics;University;Jinan;Institute;Semiconductors;Chinese;Academy;Sciences;College;Material;Engineering;Shanghai;Science; |
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| 摘 要： | 为对SIMOX SOI材料进行抗总剂量辐照加固，可向材料的埋氧（BOX）层中注入一定剂量的氮元素。但是，研究发现，注氮埋层中的初始电荷密度皆为正值且密度较高，而且随着注氮剂量的增加而上升。注氮埋层中较高的正电荷密度可归因于氮在退火过程中在Si-BOX界面的积累。另外，与注氮埋层不同的是，注氟的埋层却显示出具有负的电荷密度。为得到埋层的电荷密度，测试用样品制成金属-埋氧-半导体(MBS)电容结构，用于进行高频C-V测量分析。
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| 关 键 词： | 氮离子注入 SOI晶圆 电荷密度 总剂量辐照 氮氧化物 SIMOX 硅绝缘体 离子注入剂量 |
| 收稿时间： | 8/27/2009 3:39:16 AM |
Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers |
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| Zheng Zhongshan,Liu Zhongli,Li Ning,Li Guohua and Zhang Enxia.Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers[J].Chinese Journal of Semiconductors,2010,31(2):026001-4. |
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| Authors: | Zheng Zhongshan Liu Zhongli Li Ning Li Guohua and Zhang Enxia |
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| Institution: | Department of Physics, University of Jinan, Jinan 250022, China; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China |
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| Abstract: | To harden silicon-on-insulator(SOI) wafers fabricated using separation by implanted oxygen(SIMOX) to total-dose irradiation,the technique of nitrogen implantation into the buried oxide(BOX) layer of SIMOX wafers can be used.However,in this work,it has been found that all the nitrogen-implanted BOX layers reveal greater initial positive charge densities,which increased with increasing nitrogen implantation dose.Also,the results indicate that excessively large nitrogen implantation dose reduced the radiation ... |
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| Keywords: | buried oxide charge density nitrogen implantation fluorine implantation |
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