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State-specific reactions of Cu(+)(1S, 3D) with CH3X and CF3X (X = Cl, Br, I): exploring the influence of dipole orientation on association and C-X bond activation
Authors:Taylor William S  Abrams Micah L  Matthews Cullen C  Byers Seth  Musial Scott  Nichols Charles M
Institution:Department of Chemistry, University of Central Arkansas, Conway, Arkansas 72035, USA. billt@uca.edu
Abstract:The reactions of gas-phase Cu(+)((1)S) and Cu(+)((3)D) with CF(3)X and CH(3)X (X = Cl, Br, and I) have been examined experimentally using the drift cell technique at 3.5 Torr in He at room temperature. State-specific product channels and overall bimolecular rate constants for depletion of the two Cu(+) states were determined using electronic state chromatography. The results showed that Cu(+)((1)S) participates exclusively in association with all of these neutrals, whereas, depending on the neutral, Cu(+)((3)D) initiates up to three bimolecular processes, resulting in the formation of CuX(+), CuC(H/F)(3)(+), and C(H/F)(3)X(+). Possible structures for the singlet association products were explored using density functional methods. These calculations indicated that Cu(+) preferentially associates with the labile halogen (Cl, Br, I) with all neutrals except CF(3)Cl, for which a "backside" geometry occurs in which Cu(+)((1)S) is weakly bound to the -CF(3) end of the molecule. All products observed on the triplet reaction surface can be understood in terms of either known or calculated thermochemical requirements. Product distributions and overall reaction efficiencies for C-X bond activation (X = Br, I) through Cu(+)((3)D) suggest that the orientation of the neutral dipole has little or no effect in controlling access to specific product channels. Likewise, second-order rate constants for reactions with X = Br and I indicate efficient depletion of Cu(+)((3)D) and do not exhibit the dramatic variations in reaction efficiency previously observed with CH(3)Cl and CF(3)Cl. These results suggest that C-X bond activation proceeds through a bond-insertion mechanism as opposed to direct abstraction.
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