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GaAs MESFET灵敏度分析
引用本文:潘扬. GaAs MESFET灵敏度分析[J]. 固体电子学研究与进展, 1989, 9(2): 135-142
作者姓名:潘扬
作者单位:南京电子器件研究所
摘    要:本文叙述了灵敏度分析的重要意义。介绍了所用的MESFET模型与三个子程序DATA,MODEL,SPARAM及主程序SENSIT,并给出计算分析结果。结果表明,对MESFET芯片S参数影响最大的几个工艺变量、材料变量及基本物理参量,按灵敏度因子大小排列顺序为εγ,L_g,N_d,μ_o,A_s,A,L_(gs2),L_(gs3)。

关 键 词:GaAs MESFET 灵敏度

GaAs MESFET Sensitivity Analysis
Abstract:The significance of the sensitivity analysis is described in this paper. Also introduced are main program SENSIT, and three subroutines, DATA, MODEL and SPARAM and the MESFET model used in this analysis, as well as the computing results. It is concluded that the processing variations, material variations and physical parameters most influencing ths S parameters of the MESFET chip are εr, Lg, Nd, μo, As, A, Lgs2, Lgs3 in the order of the sensitivity factor.
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