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Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO2 gate stack |
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| Authors: | Younghwan Lee Kyung Taek Im Seongil Im Yeonjin Yi |
| Institution: | a Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749, Republic of Korea b Department of Physics, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749, Republic of Korea c Department of Nano Surface Science, University of Science and Technology, 52 Eoeun-dong, Yuseong-gu, Daejeon 305-333, Republic of Korea d Division of Advanced Technology, Korea Research Institute of Standards and Science, 209 Gajeong-Ro, Yuseong-gu, Daejeon 305-340, Republic of Korea |
| Abstract: | When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO2 film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O3-oxidized surface, while HfO2 film thickness was almost identical on both surfaces. Nevertheless, the HfO2 stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity. |
| Keywords: | 61 72 uf 82 80 Gk |
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