Microstructural, optical and spectroscopic studies of laser ablated nanostructured tantalum oxide thin films |
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Authors: | Renju R. Krishnan V.P. MahadevanPillai V. Ganesan |
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Affiliation: | a Department of Optoelectronics, University of Kerala, Kariavattom 695581, Thiruvananthapuram, Kerala, India b Inter University Consortium for DAE Facilities, Khandwa Road, Indore 452017, Madhyapradesh, India |
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Abstract: | Thin films of tantalum oxide (Ta2O5) have been prepared by pulsed laser deposition technique at different substrate temperatures (300-973 K) under vacuum and under oxygen background (pO2 = 2 × 10−3 mbar) conditions. The films are annealed at a temperature of 1173 K. The as-deposited films are amorphous irrespective of the substrate temperature. XRD patterns show that on annealing, the films get crystallized in orthorhombic phase of tantalum pentoxide (β-Ta2O5). The annealed films deposited at substrate temperatures 300 K and 673 K have a preferred orientation along (0 0 1) plane, whereas the films deposited at substrate temperatures above 673 K show a preferred orientation along (2 0 0) crystal plane. The deposited films are characterized using techniques such as grazing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM), micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and UV-visible spectroscopy. FTIR and micro-Raman measurements confirm the presence of Ta-O, Ta-O-Ta and O-Ta-O bands in the films. Grain size calculations from X-ray diffraction and AFM show a decrease with increase in substrate temperature. The variation of transmittance and band gap with film growth parameters are also discussed. |
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Keywords: | Tantalum oxide thin films Nanostructures Atomic force microscopy Raman spectra Pulsed laser ablation X-ray diffraction FTIR studies UV-visible spectra |
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