Characterization of CdTe films with in situ CdCl2 treatment grown by a simple vapor phase deposition technique |
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Authors: | Araceli Rios Flores,R. Castro-Rodrí guez,N. Romeo |
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Affiliation: | a Applied Physics Department, CINVESTAV-IPN Mérida, C.P. 97310 Mérida, Yucatán, Mexico b Dipartimento di fisica, Università di Parma, Campus Universitario, Parco Area delle Scienza, 43100 Parma, Italy |
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Abstract: | A unique vapor phase deposition (VPD) technique was designed and built to achieve in situ CdCl2 treatment of CdTe film. The substrate temperature was 400 °C, and the temperature of CdTe mixture with CdCl2 source was 500 °C. The structural and morphological properties of CdTe have been studied as a function of wt.% CdCl2 concentration by using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). XRD measurements show that the presence of CdCl2 vapor induces (1 1 1)-oriented growth in the CdTe film. SEM measurements have shown enhance growth of grains, in the presence of CdCl2. From AFM the roughness of the films showed a heavy dependence on CdCl2 concentration. In the presence of 4% CdCl2 concentration, the CdTe films roughness has a root mean square (rms) value of about 275 Å. This value is about 831 Å for the non-treated CdTe films. |
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Keywords: | 81.15.Kk 81.15.&minus z 81.05.Dz 68.37.Hk 68.37.Ps 61.05.cp |
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