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Fabrication of silicon pyramid/nanowire binary structure with superhydrophobicity
Authors:Xiaocheng Li  Philippe Miele  David Cornu
Affiliation:a School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
b Laboratoire des Multimatériaux et Interfaces UMR 5615 CNRS-Université Lyon 1, Université de Lyon, 43bd du 11 Novembre 1918, F-69622 Villeurbanne, France
Abstract:A pyramid/nanowire binary structure is fabricated on the silicon surface via a NaOH anisotropic etching technique followed by a silver-catalyzed chemical etching process. The silicon surface shows a stable superhydrophobicity with high contact angle of 162° and small sliding angle less than 2° after being modified with octadecyltrichlorosilane (ODTS). The binary roughness of pyramid/nanowire structure presents a stable composite interface of silicon-air-water and responsible for the superhydrophobicity of silicon surface.
Keywords:Silicon   Pyramid/nanowire binary structure   Superhydrophobicity   Contact angle hysteresis   Binary roughness
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