Mu centers in crystalline Ge under illumination |
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| Authors: | R Kadono RM Macrae K Nagamine K Nishiyama |
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| Institution: | (1) The Institute of Physical and Chemical Research (RIKEN), 2‐1 Hirosawa, Wako, Saitama 351‐01, Japan;(2) Meson Science Laboratory, Faculty of Science, University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 113, Japan |
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| Abstract: | A slow conversion to a diamagnetic state has been observed for muonium centers at the tetrahedral interstitial site (Mu0
T) in dark Ge at low temperatures. While the conversion process is affected by illumination, no effect of illumination upon
the initial (Mu0
T) centers themselves was observed at 10 K. This is in marked contrast with the case of (Mu0
T) centers in Si where strong interaction with photo‐induced carriers is observed, suggesting that the electronic level associated
with (Mu0
T) state in Ge is not located in the energy gap.
This revised version was published online in August 2006 with corrections to the Cover Date. |
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