BSIM3v3模型关键参数提取的研究

BSIM3v3是现在业界普遍使用的MOSFET模型,用它仿真电路能够得到准确的结果,但这个复杂的模型给电路设计者的手算过程带来了相当大的困难.为得到更为准确的关键参数,对用HSPICE从BSIM3v3模型提取关键参数的方法进行了改进,并以一个运放设计为例进行比较,该方法提取的关键参数的手算结果比其他方法更接近仿真结果.

Study of Key Parameter Extractions from BSIM3v3

BSIM3v3 is the most common used model base on CMOS technology.It is an accurate model for circuit simulation,but it brings large trouble to the circuit designer in using this model for hand calculation.This paper presents an improved method to extract the key parameter from BSIM3v3 using HSPICE for more precision result.With an operation amplifier design as an example,it is demonstrated that,compared to other methods,the proposed method fits more well with the simulation result.