Influence of the type and concentration of a dopant on the dynamics of the beta-induced variation in the microhardness of silicon |
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Authors: | Yu I Golovin A A Dmitrievskiĭ N Yu Suchkova |
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Institution: | (1) Tambov State University, Internatsional’naya ul. 33, Tambov, 392622, Russia |
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Abstract: | The influence of the type and concentration of a dopant (P, Sb, B) on the dynamics of the transformation of a system of structural (intrinsic and radiation-induced) defects of silicon under low-intensity electron irradiation is investigated. A qualitative model is proposed for the formation of the complexes of secondary radiation defects responsible for the maxima of beta-induced softening of silicon single crystals. |
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