| Abstract: | Infrared Fourier transform spectroscopy has been used to investigate phonon and plasmon modes in Cd1-xHgxTe and CdTe thin layer on GaAs substrate. Attenuated total reflection (ATR) spectroscopy has been used to excite surface plasmon and phonon polaritons. The plasmon-LO phonon coupling modes in samples are studied by dispersion curve calculation for various carrier concentrations. There exist three branches of coupled modes in dispersion curve. For analysis of the far infrared polarized reflectivity spectra we employ the harmonic oscillator dielectiic function model and the Drude model for free carrier response. We find that the coupling modes dependent to the concentration of free carriers. Furthermore, the experimental data have been used to calculate carrier concentration, composition parameter, mobility of carrier, thickness of layer and gap energy. |
