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激光固化快速成形SL7510型光敏树脂性能研究
引用本文:黄笔武,陈伟凡,谌伟庆. 激光固化快速成形SL7510型光敏树脂性能研究[J]. 光学学报, 2008, 28(12): 2354-2358
作者姓名:黄笔武  陈伟凡  谌伟庆
作者单位:南昌大学材料科学与工程学院,江西,南昌,330031;南昌大学材料科学与工程学院,江西,南昌,330031;南昌大学材料科学与工程学院,江西,南昌,330031
摘    要:利用红外光谱仪、紫外激光固化快速成形设备、旋转黏度计、电子拉力试验机以及热机械性能分析仪对美国Huantsman公司的SL7510型光敏树脂进行了性能研究.实验结果表明,SL7510型光敏树脂是一种环氧树脂-丙烯酸酯混杂型光敏树脂,它在30℃时的黏度为335 mPa·s,临界曝光量为10.9 mJ/cm2,透射深度为0.14 mm,固化体积收缩率为4.03%,固化物托伸强度为40.8 MPa,拉伸弹性模量为2009.2 MPa,断裂伸长率为13.6%,玻璃化温度为62℃.同时,根据所测定的光敏树脂临界曝光量和透射深度数值,选定了紫外激光固化快速成形设备的加工参数,制作了电话机外壳,其制作效果较好.

关 键 词:激光技术  快速成形  光敏树脂  临界曝光量  透射深度
收稿时间:2008-08-20

Study on the Properties of SL7510 Type Photosensitive Resin for Laser Curing Rapid Prototyping
Huang Biwu,Chen Weifan,Chen Weiqing. Study on the Properties of SL7510 Type Photosensitive Resin for Laser Curing Rapid Prototyping[J]. Acta Optica Sinica, 2008, 28(12): 2354-2358
Authors:Huang Biwu  Chen Weifan  Chen Weiqing
Affiliation:School of Material Science and Engineering;Nanchang University;Nanchang;Jiangxi 330031;China
Abstract:The properties of Huntsman SL7510 type photosensitive resin were investigated by using a FT-IR spectrometer, a stereolithography apparatus, a spinning viscometer, a universal testing machine and a thermomechanical analysis meter. The experimental results showed that the photosensitive resin belongs to an epoxy-acrylic hybrid photosensitive resin, its viscosity at 30 ℃ is 335 mPa·s, its critical exposure (Ec) is 10.9 mJ/cm2, its penetration depth (Dp) is 0.14 mm, its cured volumetric shrinkage is 4.03%, the tensile strength of its cured product is 40.8 MPa, the tensile modulus of its cured product is 2009.2 MPa, the elongation at break of its cured product is 13.6%, and the glass transition temperature of its cured product is 62 ℃. According to the determined Ec and Dp values of the photosensitive resin, the processing parameters of the stereolithography apparatus were chosen to fabricate the part of a telephone shell, and the quality of the fabricated part was good.
Keywords:laser technique  rapid prototyping  photosensitive resin  critical exposure  penetration depth  
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