Epitaxial growth of rhenium on intrinsic and foreign substrates

Epitaxial growth of rhenium electrodeposited from a CsCl-Cs₂ReCl₆ chloride melt onto single crystal substrates (planar and bent) of rhenium with (10 $ \overline 1 Epitaxial growth of rhenium electrodeposited from a CsCl-Cs₂ReCl₆ chloride melt onto single crystal substrates (planar and bent) of rhenium with (100), (110), and (0001) orientations and tungsten with (110), (100), (112), and (111) orientations is studied. Optimum conditions of epitaxial growth on a rhenium single crystal with (0001) and (110) orientations are found. The basic possibility is shown of the rhenium heteroepitaxial growth on the (111)-and (100)-tungsten single crystal substrates under specified conditions of electrodeposition from a melt. The rhenium epitaxial growth depends both on the electrolysis conditions and on the substrate orientation. The surface morphology of the rhenium deposits is studied. The microhardness of single crystal and polycrystalline rhenium layers with (0001) orientation is measured. Original Russian Text ? N.O. Esina, L.M. Minchenko, A.A. Pankratov, 2008, published in Elektrokhimiya, 2008, Vol. 44, No. 6, pp. 738–744.