Properties of amorphous CoZr(RE) (RE=Gd,Sm, Dy) films with various uniaxial anisotropies,prepared by a new process |
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| Institution: | 1. Laboratoire Louis Néel, CNRS, B.P.166 Grenoble 38042, Cedex, France;2. Laboratoire de Magnétisme et d’Optique, CNRS, Université de Versailles, Versailles 78035 Cedex, France;3. Institut de Physique et Chimie, IPCMS, Strasbourg 67037, France;4. Laboratoire de Science et Genie des Matériaux, EMN, Nancy 54042 France;5. Institut für Festkörper und Werkstofforschung P.O. Box 270016, Dresden 01069 Germany;1. College of Material Science and Engineering, Chongqing University, Chongqing 400045, China;2. College of Civil Science and Engineering, Yangzhou University, Yangzhou 225127, China;1. Department of Biotechnology, Chemistry and Pharmacy, University of Siena, Via A. Moro 2, 53100 Siena, Italy;2. Department of Life Sciences, University of Siena, Via A. Moro 2, 53100 Siena, Italy;3. Department of Physical Sciences, Earth and Environment, University of Siena, Strada Laterina 8, 53100 Siena, Italy;4. The Danish National Research Foundation and Villum Foundation’s Center for Intelligent Drug Delivery and Sensing Using Microcontainers and Nanomechanics (IDUN), Department of Health Technology, Technical University of Denmark, Ørsteds Plads, Building 345C, 2800 Kgs. Lyngby, Denmark;1. Guangdong Provincial Key Lab of Geodynamics and Geohazards, School of Earth Sciences and Engineering, Sun Yat-sen University, Guangzhou, China;2. Department of Earth and Planetary Sciences, University of California Santa Cruz, Santa Cruz, CA 95064, USA;3. Seismological Laboratory, California Institute of Technology, Pasadena, CA 91125, USA;1. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, People’s Republic of China;2. Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000, People’s Republic of China;3. Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, People’s Republic of China |
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| Abstract: | If a DC magnetic field is applied parallel to the plane of amorphous CoZr(RE) thin films during sputter depositing, a uniaxial anisotropy is formed the direction of which depends upon the choice of RE substituted and its concentration. When RE=Gd a perpendicular anisotropy Kp forms over a large concentration range, a spin reorientation process being at the origin of the process. A well-defined Kp is developed also in CoFeZrGd and CoZrGdSm films. CoZrGdDy films exhibit simultaneously a perpendicular and an in-plane uniaxial anisotropy. The related magnetization process and domain structures are quite peculiar. |
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