Exchange bias in patterned FeMn/NiFe bilayers |
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| Institution: | 1. Data Storage Institute, 5 Engineering Drive 1, National University of Singapore, Singapore 117608, Singapore;2. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore;1. AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Aleja Adama Mickiewicza 30, 30-059 Kraków, Poland;2. Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, 30-239 Kraków, Poland;1. CNRS, ICMCB, UPR 9048, F-33600 Pessac, France;2. Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, France;1. Shenyang University of Technology, Shenyang 110870, PR China;2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, PR China;1. Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore 54590, Pakistan;2. Chemical Engineering Department, College of Engineering, King Saud University, Riyadh, Saudi Arabia;3. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;1. Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan;2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan;3. Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan |
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| Abstract: | Electron beam lithography and ion beam etching have been used to pattern a wire-like array in FeMn/NiFe bilayers. The variation of hysteresis loops with the etching depth in FeMn layer has been presented, and it has been found that with increasing etching depth the coercivity increases and M–H loops show an asymmetric kink. Detailed studies of the magnetic behaviors of the asymmetric kink in the patterned sample with 3.5 nm thick FeMn layer have been performed, and a magnetization component perpendicular to the wire direction has been observed. |
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