Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation |
| |
| Affiliation: | 1. Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland;2. Institut für Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany;3. Walter Schottky Institut, TU München, 85748 Garching, Germany;1. Department of Physics, P. K. College, Contai, Purba Medinipur, West Bengal – 721401, India;2. Ajodhya Hills G.S.A.T High School, Ajodhya, Purulia, West Bengal – 723152, India;3. Purulia Zilla School, Dulmi Nadiha, Purulia, West Bengal – 723102, India;4. Department of Theoretical Physics, Indian Association for the Cultivation of Science, Jadavpur – 700032, India;1. College of Sciences, Northeastern University, Shenyang 110819, People’s Republic of China;2. Department of Mathematics and Physics, Shenyang University of Chemical Technology, Shenyang 110142, People’s Republic of China;1. Centre for Nanotechnology & Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613401, Tamil Nadu, India;2. School of Electrical & Electronics Engineering, SASTRA University, Thanjavur 613401, Tamil Nadu, India;1. School of Materials Sciences and Engineering, Shijiazhuang Tiedao University, 050043, Shijiazhuang, People''s Republic of China;2. State Key Lab. of Advanced Functional Materials, Department of Materials and Manufacturing, Beijing University of Technology, 100124, Beijing, People''s Republic of China;3. Henan Provincial Engineering Laboratory of Building-Photovoltaics, Institute of Physics, Henan University of Urban Construction, 467036, Henan, People''s Republic of China;1. Graduate Institute of Environmental Engineering, National Taiwan University, Taiwan;2. State Key Laboratory of Marine Environmental Science, Key Laboratory of the Ministry of Education for Coastal and Wetland Ecosystems, College of the Environment and Ecology, Xiamen University, Fujian Province 361005, China;3. Department of Environmental Engineering, National I-Lan University, I-Lan, Taiwan |
| |
| Abstract: | Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted below the oxidized regions. This way the plane of a 2DEG can be cut into various conductive areas which are laterally insulated from each other. The realization of several high-quality semiconductor nanostructures is demonstrated. I. Quantum wires are fabricated with smooth and steep potential. II. Quantum dots tuned by in-plane gate electrodes can be operated in the regime, where electrons tunnel sequentially through individual quantum levels. III. Antidot superlattices with high-precision lattice parameters display characteristic features of classical and quantum transport. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
