Phonon amplification in a quasi-one-dimensional GaAs quantum channel |
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| Institution: | 1. School of Science, Tianjin University, Tianjin 300072, PR China;2. School of Chemical Engineering, Tianjin University, Tianjin 300072, PR China;3. Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, PR China;1. School of Science, Xi’an Jiao Tong University, Xi’an 710049, Shaanxi, PR China;2. National Engineering Research Center for Nanotechnology, Shanghai 200241, PR China;1. New Technologies - Research Centre, University of West Bohemia, Univerzitni 8, 306 14, Pilsen, Czech Republic;2. Department of Physics, The University of Lahore, Sargodha Campus, 40100, Sargodha, Pakistan;1. College of Nanotechnology, King Mongkut''s Institute of Technology Ladkrabang, Chalongkrung Rd., Ladkrabang, Bangkok 10520 Thailand;2. Nanotec-KMITL Center of Execellence on Nanoelectronics Device, Chalongkrung Rd., Ladkrabang, Bangkok 10520 Thailand;3. Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd., Bangkok 10400 Thailand |
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| Abstract: | We propose a calculation for the amplification coefficient γqof acoustical phonons interacting with electrons in a quasi-one-dimensional GaAs channel subjected to an external dc electric field. Two regimes of temperatures have been investigated and it has been found, by considering only intrasubband transitions, that the amplification coefficient for a particular frequency, and for phonons propagating along the channel length ( z -axis), is a step-like function of the applied field at low temperatures. For high temperatures the amplification coefficient shows an exponential behavior as a function of the applied electric field. Furthermore, provided the one-dimensional quantum channel has high electron mobility values, coherent acoustic-phonons can be amplified in modest electric fields. |
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