Nonequilibrium spin accumulation and tunneling magnetoresistance in a ferromagnet/semiconductor/ferromagnet double tunnel junction |
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| Affiliation: | 1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;2. Applied Research Center for Thin-Film Metallic Glass, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;3. Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan |
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| Abstract: | Taking into account the nonequilibrium spin accumulation, we apply a quantum-statistical approach to study the spin-polarized transport in a two-dimensional ferromagnet/semiconductor/ferromagnet (FM/SM/FM) double tunnel junction. It is found that the effective spin polarization is raised by increasing the barrier strength, resulting in an enhancement of the tunneling magnetoresistance (TMR). The nonequilibrium spin accumulation in SM may appear in both antiparallel and parallel alignments of magnetizations in two FMs, in particular for high bias voltages. The effects of spin accumulation and TMR on the bias voltage are discussed. |
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