Prediction of enhanced ferromagnetism in (Ga,Mn)As by intrinsic defect manipulation |
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| Institution: | 1. Institute of Physics, PAS, 02-668 Warsaw, Poland;2. A.A. Galkin Donetsk Physico-Technical Institute, Ukranian Academy of Sciences, R. Luxemburg 72, 340114 Donetsk, Ukraine;1. School of Physics and Chemistry, Lancaster University, Lancaster LA1 4YB, UK;2. Defence Evaluation and Research Agency, Electronics Sector, Malvern, Worcs. WR14 3PS, UK;1. Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan;2. Department of Physics, National Taiwan University, Taipei, Taiwan |
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| Abstract: | In the diluted magnetic semiconductor (Ga,Mn)As the excess of As incorporated as As antisites (AsGa) is responsible for the hole compensation. The AsGa defect can be transformed into a As interstitial–Ga vacancy pair (Asi–VGa) upon illumination. In this paper we study the effects of such a transition on the ferromagnetism of (Ga,Mn)As using density functional theory within the local spin density approximation. We find that the ferromagnetic order in (Ga,Mn)As is strongly enhanced if AsGa are transformed into Asi–VGa pairs, since the hole compensation is reduced. This suggests a valuable way to tune the carrier concentration and hence the Tc in (Ga,Mn)As, without changing the Mn concentration nor the microscopic configuration of the Mn ions. |
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