Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition |
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| Institution: | 1. Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;2. Department of Physics, State University of New York, College at Fredonia, Fredonia, NY 14063, USA;1. College of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, China;2. College of Science, Xi’an Shiyou University, Xi’an 710065, China;3. Institute of Modern Physics, Northwest University, Xi’an 710069, China;1. Laboratory of Condensed Matter and Nanosciences, Department of Physics, Faculty of Sciences of Monastir, Monastir 5019, Tunisia;2. Laboratory of Physics of Materials and Nanomaterials Applied to the Environment, Faculty of Sciences of Gabes, University of Gabes, City Erriadh 6079, Gabes, Tunisia;3. Laboratory of Materials Science and Engineering, Faculty of Mechanical Engineering and Process Engineering, University of Science and Technology Houari Boumediene, BP32 El Alia, Bab Ezzouar 16111, Algiers, Algeria;1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;2. Institute National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;3. Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China;4. Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China;5. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;1. AIDS Immunopathogenesis Unit, Instituto de Salud Carlos III, Madrid 28220, Spain;2. Institut de Génétique Humaine CNRS UPR1142, Université de Montpellier, Laboratoire de Virologie Moléculaire, Montpellier 34000, France;3. Case Western Reserve University, University Hospitals Case Medical Center, Cleveland, OH 44106, USA;1. School of Science, Xi’an University of Science and Technology, Xi’an 710054, PR China;2. Department of Applied Physics, Northwestern Polytechnical University, Xi’an 710072, PR China |
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| Abstract: | Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (Ts) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at Ts between 200°C and 330°C were single crystals. Amorphous films were observed at Ts below 200°C and it was not possible to deposit films at Ts above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at Ts above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at Ts between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the 1 1 0] direction. For the thinner Fe films (?200 Å) regardless of growth temperature, square loops along the 1 0 0] easy axis were very weak and broad. |
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