Exciton binding energy in a double quantum well: effect of the barrier shift |
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| Institution: | 1. Department of Physics, University of Süleyman Demirel, 32260 Isparta, Turkey;2. Institute of Physics, Azerbaijan National Academy of Sciences, 370143 Baku, Azerbaijan;3. Baku State University Baku Az1148, Azerbaijan;1. Province Key Lab of Fine Petrochemical Engineering, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, Jiangsu Province, China;2. School of Materials Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu Province, China;3. School of Chemical Engineering and Materials, Changzhou Institute of Technology, Changzhou, Jiangsu Province, China;4. Qualtec Co., Ltd, Osaka 590-0906, Japan |
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| Abstract: | We have calculated the exciton binding energy in an Al xGa1 ? x As / GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton binding energy has been analysed. It has been observed that this shift induces significant changes of the exciton binding energy—even several meVs in the case of very thin barriers. |
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