Transport properties of LaCu2Si2 and CeCu2Si2 between 1.5K and 300K |
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Authors: | W Franz A Grießel F Steglich D Wohlleben |
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Institution: | (1) II. Physikalisches Institut, Universität zu Köln, Zülpicher Str. 77, D-5000 Köln 41, Federal Republic of Germany |
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Abstract: | We report measurements of the electrical resistivity, the thermal conductivityk and the thermoelectric powerS between 1.5K and 300K on the anomalous CeCu2Si2 compound and on LaCu2Si2 as reference compound. For LaCu2Si2 the temperature dependences of andS are in accord with those found in otherd band metals. For CeCu2Si2 the observed resistivity (220 µ cm at 200K) leads to a very short electronic mean free path which is of the order of the Ce-Ce spacing. Correspondingly,k is almost identical with the phonon contributionk
p
. Below 20K, resistivity and thermoelectric power strongly suggest Fermi liquid behavior with a degeneracy temperature between 20K and 40K. Above 200K, both andS decrease proportionally to –ln(T/1 K).Work performed within the research program of the Sonderforschungsbereich 125 Aachen/Jülich/KölnPart of this work will be presented at the Int. Conf. on Rare Earths in the Metallic State, St. Pierre de Chartreuse, Sept. 1978 |
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