Optical properties of laser-induced heavily doped Si

An analysis of recently reported experimental studies⁽¹⁾ of the optical properties of laser-induced heavily doped Si layers is presented here. The analysis has been made on the basis of models like those of Penn⁽²⁾ and Breckenridge et al.⁽³⁾ Our calculations show that, in general, N_eff, the effective number of electrons contributing to optically induced electronic transitions, increases as does ε₂(E), the imaginary part of the complex dielectric constant. This reflects an increased absorption coefficient for these As-doped samples. These studies have been carried out on samples of Si heavily doped by ion-implantation followed by a laser-annealing process. The conclusions based on these studies are seen to be in accord with those of Aspnes et al.⁽⁴⁾ and Vina and Cardona.⁽⁵⁾