Photoemission study of interfacial reactions during annealing of ultrathin yttrium on SiO2/Si(1 0 0) |
| |
| Institution: | 1. Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, PR China;2. Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK;1. Federal State Unitary Enterprise, All-Russian Research Institute of Automatics n.a. N.L. Dukhov (VNIIA), Syshevskaya str. 22, Moscow 127055, Russian Federation;2. Moscow Institute of Physics and Technology (State University), Dolgoprydny, Institytski str. 9, Moscow region, 141700, Russian Federation;1. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, PR China;2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, PR China;3. University of Chinese Academy of Sciences, Beijing 100049, PR China;4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Rd., Shanghai 200050, PR China;1. University of Debrecen, Department of Solid State Physics, P.O. Box 2, H-4010 Debrecen, Hungary;2. Ain Shams University, Department of Physics, Faculty of Education, Roxy, Cairo, Egypt;3. University of Miskolc, Department of Mineralogy and Geology, Hungary |
| |
| Abstract: | X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and work-function measurements have been used to investigate the Y/SiO2/Si(1 0 0) interfaces in situ as a function of annealing temperature. The results show that yttrium is very reactive with SiO2 and can react with SiO2 to form Y silicate and Y2O3 even at room temperature. Annealing leads to the continual growth of the Y silicate. Two distinctive reaction mechanisms are suggested for the annealing processes below and above 600 K. The reaction between metallic yttrium and SiO2 dominates the annealing processes below 600 K, while at annealing temperatures above 600 K, a reaction between the new-formed Y2O3 and SiO2 becomes dominant. No Y silicide is formed during Y deposition and subsequent annealing processes. UPS valence-band spectra indicate the silicate layer is formed at the top surface. After 1050 K annealing, a Y-silicate/SiO2/Si structure free of Y2O3 is finally formed. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
