AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application |
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| Institution: | 1. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050 Shanghai, China;1. Key Laboratory of Industrial Ecology and Environmental Engineering, MOE, Dalian University of Technology, Dalian 116024, China;2. School of Electrical Engineering, Dalian University of Technology, Dalian 116024, China;3. School of Environmental Science & Technology, Dalian University of Technology, Dalian 116024, China;1. Laboratorio de Nanocatálisis, Departamento de Ingeniería Química, Facultad de Química, Universidad Nacional Autónoma de México (UNAM), Cd. Universitaria, Coyoacán, 04510, México D.F., Mexico;2. Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apartado Postal 20-364, 01000, México D.F., Mexico;1. Department of Measurements and Process Control, Faculty of Chemical Engineering and Technology, University of Zagreb, Marulićev trg 19, HR-10000 Zagreb, Croatia;2. Petroleum and Petrochemical Department, Faculty of Chemical Engineering and Technology, University of Zagreb, Marulićev trg 19, HR-10000 Zagreb, Croatia;3. Department of Industrial Ecology, Faculty of Chemical Engineering and Technology, University of Zagreb, HR-10000 Zagreb, Croatia;1. CIATEC A.C. Centro de Innovación Aplicada en Tecnologías Competitivas A.C., Dirección de Investigación, Posgrado y Capacitación, Omega 201, Colonia Industrial Delta, León, Guanajuato, 37545, Mexico;2. División de Ciencias Ambientales, IPICYT, Camino a la Presa San José 2055, Col. Lomas 4a sección, San Luis Potosí, 78216, Mexico;1. Instituto Mexicano del Petróleo, Av. Eje Central Lázaro Cárdenas Norte 152, Col. San Bartolo Atepehuacan, 07730 Ciudad de México, México;2. Universidad Autónoma Metropolitana Unidad Azcapotzalco, Av. San Pablo N° 180, Col. Reynosa Tamaulipas, 02200 Ciudad de México, México |
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| Abstract: | The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO2 layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800 °C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed. |
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