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Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques |
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| Authors: | N. Hamdaoui R. AjjelB. Salem M. GendryH. Maaref |
| Affiliation: | a Laboratoire d''énergétique et de transfert thermique et massique LETTM, Ecole supérieur des Sciences et de la Technologie Hammam Sousse, Université de Sousse, 4011, Tunisia b Laboratoire des Technologies de la Microélectronique (LTM), UMR CNRS, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble, France c Institut des Nanotechnologies de Lyon, INL-CNRS, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully, France d Département de Physique, Faculté des Sciences de Monastir, Laboratoire Micro-Optoélectroniques et Nanostructures, Université de Monastir, 5019, Tunisia |
| Abstract: | Capacitance-voltage and deep level transient spectroscopy were used to study the capture characteristics of self-assembled InAs/InAlAs quantum dots grown on the InP substrate. It is found that the number of electrons captured by quantum dots can be controlled by varying the width of applied pulse voltage in the DLTS measurements. The Coulomb charging energy and the time of capture can be deduced from the filling time dependent deep level transient spectra. |
| Keywords: | Quantum dots DLTS Capture process |
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