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Contribution of weak localization, electron-electron interaction, and Zeeman spin-splitting effects in corrective term “mT” of the metallic conductivity in n-type GaAs |
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| Authors: | A SybousA El kaaouachi N Ait Ben AmeurB Capoen J HemineR Abdia A NarjisH Sahsah G Biskupski |
| Institution: | a Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco b C E R L A-FR CNRS 2416, Université des Sciences et Technologies de LilleI, 59 655 Villeneuve d''Ascq Cedex, France c Laboratoire de Physique de la Matière Condensée, Faculté des Sciences et Techniques de Mohammadia, Département de Physique, Mohammadia, Morocco d Laboratoire de Spectroscopie Hertzienne, LSH équipe des semi-conducteurs, Bâtiment P5, Université des Sciences et Technologies de LilleI, 59 655 Villeneuve d''Ascq Cedex, France |
| Abstract: | We present measurements of the electrical conductivity of barely metallic n-type GaAs that are driven to the metal-insulator transition (MIT) by magnetic field. The experiments were carried out at low temperature in the range (4.2-0.066 K) and in magnetic field up to 4 T. We have determined the magnetic field for which the conductivity changes from the metallic behavior to insulator regime. On the metallic side of the MIT, the electrical conductivity is found to obey σ=σ0+mT1/2 down to 66 mK. Physical explanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between different effects involved in the mechanisms of conduction, like electron-electron interaction effect, Zeeman spin-splitting effect, and weak localization effect. |
| Keywords: | GaAs semiconductor Low temperature Magnetic field Metal-insulator transition Electron-electron interaction effect Weak localization effect Zeeman spin-splitting effect |
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