Aluminum and nitrogen impurities in Wurtzite ZnO: first-principles studies |
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Authors: | P. Li Sh.H. DengY.B. Li J. HuangG.H. Liu L. Zhang |
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Affiliation: | a Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China b School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China c School of Materials and Chemical Engineering, Anhui University of Architecture, Hefei 230601, China |
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Abstract: | First-principles calculations have been performed to investigate the doping behaviors of Al and N dopant impurities in ZnO. According to the results, in the Al mono-doping case, the impurity states are quite delocalized, the corresponding effective masses are small, and the formation energy is as low as −9.71 eV. In the N mono-doping case, the impurity states are localized, the effective masses are large, and the formation energy is high (4.55 eV in the most favorable extreme O-rich conditions). In the Al-N codoping case, the corresponding effective masses are marked decreased compared to the N mono-doping situations, and the formation energy of the N-Al-N system is as low as −2.54 eV in the O-rich condition. The above results can explain the electrical behaviors of the doped or codoped ZnO systems observed in experiments. |
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Keywords: | First-principles ZnO Doping |
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