Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry |
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Authors: | A. Gutié rrez,M.E. Rodrí guez-Garcí aJ. Giraldo |
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Affiliation: | a Departamento de Física, Universidad Nacional de Colombia-Sede Bogotá, Avenida Carrera 30 No. 45-03, Ciudad Universitaria, Bogotá, DC, Colombia b Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Campus Juriquilla, Querétaro, Qro. México A.P 1-1010, Mexico |
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Abstract: | Photocarrier radiometry (PCR) was used to characterize four n-type silicon wafers with different resistivity values in the 1-20 Ω cm range. Simulations of the PCR signal have been performed to study the influence of the recombination lifetime and front surface recombination velocity on them; besides, the transport parameters (carrier recombination lifetime, diffusion coefficient, and frontal surface recombination) of the wafers were obtained by means of a fitting procedure. The PCR images that are related to the lifetime are presented, and the first photoelectronic images of a porous silicon sample are obtained. |
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Keywords: | Photoelectronic characterization Photocarrier radiometry Nondestructive testing Silicon wafers Transport properties Porous silicon |
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