|
|||||
|
|
X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections |
|
| Authors: | Teruaki Takeuchi Kosuke Tatsumura Iwao OhdomariTakayoshi Shimura Masao Nagase |
| Institution: | a Institute for Nanoscience and Nanotechnology, Waseda University, 120-5, 513 Wasedatsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan b Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan c Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871, Japan d NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato-wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan |
| Abstract: | Comparisons of the experimental and calculated X-ray diffraction profiles have been made for Si nanowires with trapezoidal cross-sections. Examined samples are periodically arranged nanowires prepared on a silicon-on-insulator wafer by electron-beam lithography, so that they are isolated from Si substrate. The nanowire periodicity gives rise to diffractions at additional reciprocal lattice points, which we employ to avoid the mixture of the diffraction from the Si substrate. The experimental diffraction profiles are found to be in good agreement with the square modulus of the Fourier transform of the trapezoidal cross-sections determined from transmission electron micrographs. |
| Keywords: | X-ray diffraction Si nanowire Fourier transform Trapezoidal cross-section |
| 本文献已被 ScienceDirect 等数据库收录！ | |