Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs |
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Authors: | Liu Hong-Xi Li Jin Li Bin Cao Lei and Yuan Bo |
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Institution: | Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract: | This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and drain-induced barrier-lowering of CMOS-based devices in nanometre scale. |
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Keywords: | strained-Si double-gate MOSFET surface potential short-channel effect |
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