| 退火温度对VOX薄膜结构及光学性质的影响 |
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| 引用本文： | 张雷,何捷,王玲珑,刘强,王晓中,郭英杰. 退火温度对VOX薄膜结构及光学性质的影响[J]. 光散射学报, 2009, 21(1): 37 |
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| 作者姓名： | 张雷 何捷 王玲珑 刘强 王晓中 郭英杰 |
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| 作者单位： | 四川大学物理科学与技术学院,辐射物理及技术教育部重点实验室,成都,610064 |
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| 摘 要： | 以高纯五氧化二钒(V2O5)粉末(纯度≥99.99%, 质量百分比)为原料, 采用真空蒸发--还原工艺, 在不同退火温度下还原出不同组分的VOX薄膜。利用X射线衍射仪, X射线光电子能谱仪和紫外-可见分光光度计对薄膜进行测试和分析, 得到了不同退火温度与薄膜结构和其光学特性的关系。结果显示: V2O5中的V5+随着退火温度的上升被还原, 退火温度为450℃时, V4+含量最高, 结晶最好, 500℃时, 薄膜组分表现出逆退火现象, 温度进一步升高, 钒再次被还原。
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| 关 键 词： | 薄膜 真空蒸镀 退火温度 禁带宽度 |
| 收稿时间： | 2008-11-27 |
The Effect of Annealing Temperature on Structure and Optical Properties of VO_X Thin Films |
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| ZHANG Lei,HE Jie,WANG Ling-long,LIU Qiang,WANG Xiao-zhong,GUO Ying-jie. The Effect of Annealing Temperature on Structure and Optical Properties of VO_X Thin Films[J]. Chinese Journal of Light Scattering, 2009, 21(1): 37 |
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| Authors: | ZHANG Lei HE Jie WANG Ling-long LIU Qiang WANG Xiao-zhong GUO Ying-jie |
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| Affiliation: | Irradiation Physics and Technology Key Laboratory of National Education Ministry;College of Physics Science and Technology;Sichuan University;Chengdu 610064;China |
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| Abstract: | The V2O5 thin films were deposited by vacuum-evaporation technology from the V2O5 powder(purity≥99.99%,in mass).The V2O5 thin films were annealed at different temperature in the vacuum coating machine.Then the VOX thin films were gained.The thin films were measured by XRD,XPS and ultraviolet-visible spectrophotometer.The relationship between annealing temperature and structure and optical properties was obtained.V5+ was deoxidized with the annealing temperature rising.At 450℃,the content of V4+ was highest and crystallization was best.At 500℃,substrate diffusion became serious.The composition of the VOX thin films show counter annealing phenomenon.When the temperature further elevated V was deoxidized again. |
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| Keywords: | thin films vacuum evaporation annealing temperature energy gap |
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