Convection in the bridgman growth of narrow-gap semiconductors |
| |
| Authors: | R. Breschi V. Fano I. Ortalli |
| |
| Affiliation: | (1) CRESAM, S. Piero a Grado, Italy;(2) Istituto Scienze Fisiche, Università di Parma, Parma, Italy |
| |
| Abstract: | Summary The free convection in the melt during the crystal growth of small-gap semiconductors, and its influence on the electrical properties are discussed. Dimensionaless parameters of the fluid flow, electrical properties of PbTe, Pb1−x Sn x Te and Hg1−x Cd x Te single crystals, grown by vertical Bridgman technique at very low velocity, and some structures, found in these materials, support the presence of free convection. |
| |
| Keywords: | Direct energy conversion and energy storage PACS 85.60.Gz Photodetectors and infrared detectors |
| 本文献已被 SpringerLink 等数据库收录！ |
|
