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Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam |
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| Authors: | B. J. Park J. K. Yeon W. S. Lim S. K. Kang J. W. Bae G. Y. Yeom M. S. Jhon S. H. Shin K. S. Chang J. I. Song Y. T. Lee J. H. Jang |
| Affiliation: | 1. Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, South Korea 2. Sungkyun Advanced Institute of Nano Technology (SAINT), Suwon, South Korea 3. Department of Chemical Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA, 15213, USA 4. School of Information and Mechatronics, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, South Korea 5. Korea Basic Science Institute Division of Instrument Development, Daedeok Headquarters 113, Gwahangno, Yusung-gu, Daejeon, South Korea 6. Center for Distributed Sensor Network, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, South Korea |
| Abstract: | Highly selective and low damage etching of the GaAs cap layer on AlGaAs is essential in fabricating GaAs/AlGaAs high electron mobility transistors. The GaAs on AlGaAs was etched using a low energy Cl2/O2 neutral beam and the Schottky device characteristics fabricated on the exposed AlGaAs were compared with those fabricated after the etching using wet etching and a Cl2/O2 ion beam. Using a low energy Cl2/O2 ion beam or a Cl2/O2 neutral beam, highly selective etching of the GaAs cap layer to AlGaAs similar to wet etching could be achieved through the formation of Al2O3 on the exposed AlGaAs during the etching. When the electrical characteristics of the Schottky devices were compared, the devices fabricated after the etching using the neutral beam showed the best electrical characteristics such as electrical stability, low leakage current, higher barrier height, etc. by showing low damage to the exposed AlGaAs surface. |
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