Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient |
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| Authors: | JC Sun HW Liang JZ Zhao JM Bian QJ Feng LZ Hu HQ Zhang XP Liang YM Luo GT Du |
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| Institution: | aState Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;bCollege of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, China |
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| Abstract: | ZnO homojunction light emitting device (LED) with n-ZnO:Ga/p-ZnO:N structure was fabricated on sapphire substrate by metal organic chemical vapor deposition. The reproducible p-type ZnO:N layer with hole concentration of 1.29 × 1017 cm−3 was formed with NH3 as N doping source followed by thermal annealing in N2O plasma protective ambient. The device exhibited desirable rectifying behavior. Distinct electroluminescence emission centered at 3.2 eV and 2.4 eV were detected from this device under forward bias at room temperature. The intensive ultraviolet emission was comparable to the visible emission in the electroluminescence spectrum, which represent remarkable progress in the performance of ZnO homojunction LED. |
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