Compton scattering of 59.54 keV γ‐rays from Fe and p‐Si samples in an external magnetic field

We report on the Compton scattering of photons from samples whose surface charge density distributions are changed by an external magnetic field. We performed a Compton scattering experiment known to be particularly sensitive to the behavior of the relatively slower moving outer electrons (valence electrons) involved in bonding in condensed matter. The external magnetic field was used to change the surface charge density distributions of Fe and p‐Si samples. Samples were located in the external magnetic field of intensity 215 G and in a direction which was perpendicular both to the current and surface of the samples bombarded by 59.5 keV γ‐photons emitted from an Am‐241 point source. Currents in the ranges 0–8.5 A and 0–300 µA were applied to the Fe and p‐Si samples, respectively. The Compton scattered photons at an angle of 100° were detected by an Si(Li) detector. It was observed that the counts acquired under the Compton peaks tended to decrease linearly with increasing current in a magnetic field. The results show that positive charge carriers behave like negative charge carriers and electrons are more effective than holes in the Compton scattering of γ‐rays. Copyright © 2003 John Wiley & Sons, Ltd.