In-situ RHEED study on the effect of light irradiation on Ge/Si heteroepitaxial growth by GeH4 source MBE |
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| Authors: | Y Koide S Zaima K Itoh Y Yasuda |
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| Institution: | Department of Crystalline Materials Science, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan |
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| Abstract: | Effects of light irradiation on growth processes in the initial stage of growth of Ge films on (100)Si substrates by gas source molecular beam epitaxy using GeH4 have been investigated by in-situ RHEED observations. It has been found that the growth rate is enhanced by an Ar+ ion laser and a D2 lamp irradiation, and, moreover, that the growth process sequence of the Ge films irradiated by the Ar+ laser and D2 lamp is the same as that without irradiation. The irradiation effect on the photolysis of GeH4 gas has been examined by mass spectroscopy. The increase of the growth rate is due to the photolysis of GeH4 and the excitation of substrate surfaces by vacuum-ultraviolet light in the D2 lamp irradiation, and is due to only the excitation of substrate surfaces in the Ar+ laser irradiation. |
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