Structural and electrical properties of Li doped ZnO under Ar/H2 atmosphere |
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Authors: | S. Kalyanaraman R. Thangavel R. Vettumperumal |
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Affiliation: | 1. P.G. and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi, 627412, India 2. Department of Applied Physics, Indian School of Mines, Dhanbad, India
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Abstract: | Thin films of ZnO were grown by the sol–gel method using spin-coating technique on (0001) sapphire substrates. The effect of doping under Ar/H2 atmosphere on the structural and electrical properties of ZnO was investigated by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), I–V characterization, Hall effect and micro-photoluminescence. The films that were annealed at 600 °C in Ar/H2 (95/5) % atmosphere showed (002) a predominant orientation. The crystalline nature of 2 mol. % of Li doped films were better when compared to 1 mol. % of Li doped films. The incorporation of Li in ZnO lattice was confirmed by X-ray photoelectron spectroscopy, and micro-photoluminescence. Hall effect measurements and I–V characterization of the Li doped ZnO thin films exhibited a better p-type behavior. |
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