金属氧化物与现代微电子学:过渡金属前体化合物及转化为材料的化学过程

金属氧化物薄膜如HfO₂（被称为高k电介质）是现代微电子器件的关键组件，广泛用于计算机（平板电脑，笔记本电脑和台式机）、智能电话、智能电视、汽车和医疗设备中。具有大介电常数（k）的金属氧化物已经取代了介电常数小的SiO₂（k=3.9），从而使得微电子元件进一步小型化。过渡金属化合物在化学气相沉积（CVD）和原子层沉积（ALD）中被广泛用作前体，通过与O₂、H₂O或O₃的反应生成金属氧化物薄膜。微电子金属氧化物膜是纳米材料最广泛应用的一个领域。本文概观该领域的最新进展，包括我们对d⁰过渡金属配合物与O₂反应的研究。

Metal Oxides and Modern Microelectronics:Roles of Transition Metal Compounds and their Conversion to the Materials

Thin films of metal oxides such as HfO₂known as high k dielectrics (or metal gate)] are a key component of modern microelectronic devices in computers (tablet, laptop and desktop), smartphones, smart TVs, automobiles and medical devices. The metal oxides, with large dielectric constants (k), have replaced SiO₂ that has a small k of 3.9, thus making it possible to further miniaturize microelectronic components. Transition metal complexes have been widely used as precursors to produce thin films through their reactions with O₂, H₂O or O₃ in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. The microelectronic metal oxide films are one of the most widely used nano materials. Recent progresses, including our studies of the reactions of d⁰ transition metal complexes with O₂, are overviewed.