Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations |
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| Authors: | K?K?ksal B?G?nül M?Oduncuo?lu |
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| Institution: | (1) Department of Engineering Physics, University of Gaziantep, 27310, Gaziantep, Turkey;(2) Faculty of Arts and Sciences University of Kilis 7, Aralık, Kilis, Turkey |
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| Abstract: | The aim of this work is to examine the effect of dilute nitride and/or antimonite on the critical layer thickness of GaInAs
quantum wells on GaAs and InP substrates by means of Matthews and Blakeslee force model. The study provides a comparison of
the critical layer thickness of the related GaIn(N)As(Sb) QWs in (001) and (111) orientation. Our calculations indicate the
importance of antimonite and the proper usage of it with dilute nitrides in order to tailor the active layer thickness and
emission wavelength of quantum well laser devices. |
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| Keywords: | PACS" target="_blank">PACS 73 21 Fg Quantum wells 73 61 Ey III-V semiconductors 42 55 Px Semiconductor lasers laser diodes 42 60 Mi Dynamical laser instabilities noisy laser behavior |
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