Influence of Packing of Radical Cations on the Conductivity of the New Molecular Semiconductor (Doet)2ReO4 |
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Authors: | V. V. Gritsenko O. A. D'yachenko A. I. Kotov L. I. Buravov M. Mizuno |
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Affiliation: | (1) Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia;(2) National Institute of Materials and Chemical Research, Tsukuba, Ibaraki, 305-8565, Japan |
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Abstract: | A new molecular semiconductor, (Doet)2ReO4(Doet is (1,4-dioxanediyl-2,3-dithio)ethylenedithiotetrathiafulvalene), is synthesized and examined by X-ray diffraction analysis. The crystal structure of (Doet)2ReO4is formed by [Doet]+1/2layers with isle [ReO4]–anions located between them. The Doet radical cations from the adjacent layers are linked by intermolecular hydrogen interactions of the O···H type. |
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